Shenzhen TeXin electronic Co., Limited

Professional Signal Jammer Manufacturer

Manufacturer from China
Verified Supplier
6 Years
Home / Products / VCO Voltage Controlled Oscillator /

1.6GHz 6W GaAs MMIC RF Power Amplifier 1400-1800MHz YP163038 30dB Power Gain

Contact Now
Shenzhen TeXin electronic Co., Limited
Visit Website
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissYang
Contact Now

1.6GHz 6W GaAs MMIC RF Power Amplifier 1400-1800MHz YP163038 30dB Power Gain

Ask Latest Price
Video Channel
Brand Name :TX TELSIG
Model Number :YP163038
Certification :SGS, ISO9001
Place of Origin :China
MOQ :1
Price :Negotiated
Payment Terms :L/C, T/T, Paypal,etc.
Frequency Range :1400-1800MHz
Gain (Typ) :30dB
Operation :3.3-5.5V
Quiescent Current :12mA
Type :Professional Amplifier,Mini Amplifier,Home Amplifier
Power supply :220V/50Hz,12V 1.67A,220V
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

TXtelsig YP163038 RF Amplifier 1.6GHz 6W GaAs MMIC Power Amplifier 1400-1800MHz

The YP163038 is a high-power, high-efficiency Power Amplifier intend for BDS Satellite Communication and Navigation. The Power Amplifier provides a typical power gain of 30 dB and saturation power of 38dBm with CW input, typical quiescent bias condition is 5.0V at 12mA. The device is manufactured on an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. The YP163038 is assembled in a 20-pin, 5mm×5mm, QFN package, it is internally integrated with ESD protection unit.

Features
■ 1.4~1.8GHz Frequency Range
■ 30dB Power Gain (Typ)
■ 38dBm Saturation Output Power
■ 10dB Input Return Loss
■ 3.3~5.5V Operation
■ 12mA Quiescent Current
■ Integrated Output Power Detector
■ Integrated ESD Protection Unit
■ Advanced InGaP/GaAs HBT Technology

Applications
■ BDS Satellite Communication and Navigation
■ Unmanned Aerial Vehicle System


Ordering Information
■ YP163038 1.6GHz Power Amplifier Chip
■ YP163038-EVB 1.6GHz YP163038 Evaluation Board

Caution! ESD Sensitive Device


ESD Rating: Class1C
Value: Passes≥1000V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114


ESD Rating: Class IV
Value: Passes ≥1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101

MSL Rating: Level 3 at +260 °C convection
reflow
Standard: JEDEC Standard J-STD-020

Parameter Rating Unit
Input RF Power 10 dBm
Supply Voltage -0.5 to +6.0 V
Bias Voltage -0.5 to +3.0 V
DC Supply Current 3500 mA
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

1.6GHz 6W GaAs MMIC RF Power Amplifier 1400-1800MHz YP163038 30dB Power Gain

Pin Description
Pin No. Symbol Description
3 RF IN RF input
7, 9 VR1&2, VR3 Bias current control voltage
18 VCCB Supply voltage for bias
8 VCTR Power level control voltage
11, 12, 13, 14, 15 RF OUT (VCC3) RF output and stage 3 collector voltage
16 VCC2 Stage 2 collector voltage
17 PDET Power detect
18 VCCB Supply voltage for bias
19 VCCD Supply voltage for power detector
20 VCC1 Stage 1 collector voltage
1, 2, 4, 5, 6, 10 NC/GND No connection or ground

Inquiry Cart 0